Silicon Epitaxial Wafers
MicroMetrics is a supplier of silicon epitaxial wafers. We offer a wide range of capabilities to serve manufacturers of discrete Si devices. Our epi wafers are grown to customer-furnished specifications, based upon the following capabilities.
Epi Capabilites
- Wafer Diameter:
- 3", 100mm, 125mm
- Silicon substrate:
- Bulk Czochralski, bulk floatzone or SOI
- Substrate Dopant:
- FZ: Boron or Phosphorus
- CZ: Boron, Phosphorus, Arsenic or Antimony
- Epi Layer Dopant:
- Boron, Phosphorus or Arsenic
- Number of Epi Layers:
- 1, 2 or 3
- Epi Layer Resistivity Available Range:
- p-type: .009 to 1000 ohm-cm (thickness dependent)
- n-type: .005 to 2000 ohm-cm (thickness dependent)
- Epi Layer Thickness Available Range:
- 0.5 to 500 m
Epi for a Variety of Devices
MicroMetrics is an experienced manufacturer of epi wafers tailored for the following discrete silicon devices:
- PIN diodes (RF and photodiode)
- Varactor diodes
- Schottky diodes
- Bipolar transistors
- MOSFETs
- JFETs
- IGBTs
- MEMS
Quality Assurance
MicroMetrics is an ISO 9001 facility. Epi wafers are inspected per the relevant SEMI standards. Our in-house epi measurement equipment includes:
- FTIR for measurement of epi layer thickness;
- C-V Hg-probe for measurement of epi resistivity;
- Spreading resistance profile (SRP) for measurement of epi resistivity vs depth;
- Four point probe for measurement of epi resistivity atop a p-n junction;
- 100% visual inspection using a high intensity Yamada inspection lamp.
Capacity
MicroMetrics can grow small quantity, one-time orders as well as high volume blanket orders. We can rapidly add production shifts in order to fulfill surge demand for epi wafers.
Experience
MicroMetrics' silicon epi group is comprised of highly skilled and experienced technical staff, some with over 25 years of experience in the silicon epi industry. Like the rest of MicroMetrics, we are highly customer focused. We conduct production / planning meetings daily in order to promote on time delivery.
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